Introduction to High Voltage Schottky and P-N Diodes

High-voltage diodes are critical components in modern power conversion systems, enabling efficient energy flow in electric vehicles, renewable energy grids, and industrial power supplies. Understanding how these semiconductor devices handle extreme electrical stress is essential for anyone entering the field of power electronics. This text-based course guides you from the fundamental physics of semiconductor junctions to the practical design constraints of high-voltage Schottky and p-n diodes. You will gain a clear understanding of device behaviors under high reverse bias and learn how to evaluate modern semiconductor materials. What you'll learn: Understand the core physical principles of p-n junctions and Schottky barriers under high-voltage conditions; Analyze breakdown mechanisms, including avalanche and punch-through, to design reliable high-voltage structures; Compare the switching performance and conduction losses of Schottky diodes versus junction diodes; Explore modern wide bandgap materials like Silicon Carbide (SiC) and Gallium Nitride (GaN) in high-voltage applications; Evaluate edge termination techniques essential for preventing premature voltage breakdown. The course begins with foundational semiconductor electrostatics before moving into carrier transport, reverse bias behavior, and practical device design challenges. This course is designed for beginner engineering students, technicians, and electronics enthusiasts with no advanced prerequisites. Start reading today to build a solid foundation in power semiconductor technology.